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TLC272CPWR 数据表(PDF) 2 Page - Texas Instruments

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部件名 TLC272CPWR
功能描述  LinCMOS田?PRECISION DUAL OPERATIONAL AMPLIFIERS
PDF  51 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

TLC272CPWR 数据表(HTML) 2 Page - Texas Instruments

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TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS
 PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
500
µV
TLC277CD
TLC277CP
0
°Cto70°c
500
µV
2 mV
TLC277CD
TLC272BCD
TLC277CP
TLC272BCP
0
°C to 70°c
2 mV
5 mV
TLC272BCD
TLC272ACD
TLC272BCP
TLC272ACP
5 mV
10mV
TLC272ACD
TLC272CD
TLC272ACP
TLC272CP
TLC272CPW
TLC272Y
500
µV
TLC277ID
TLC277IP
40
°Cto85°C
500
µV
2 mV
TLC277ID
TLC272BID
TLC277IP
TLC272BIP
– 40
°C to 85°C
2 mV
5 mV
TLC272BID
TLC272AID
TLC272BIP
TLC272AIP
5 mV
10 mV
TLC272AID
TLC272ID
TLC272AIP
TLC272IP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS
 operational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from – 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55
°C to 125°C.



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