TSV522IST datasheet(8/27 Pages) STMICROELECTRONICS

8 / 27 page

Electrical characteristics

TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A

8/27

Doc ID 022743 Rev 1

SVR

Supply voltage rejection

ratio 20 log (

ΔVCC/ΔVio)

VCC = 2.7 V to 5.5 V,

Vout =VCC/2

T = 25 °C

-40 °C < T < 125 °C

Avd

Large signal voltage gain

Vout = 0.5 V to (VCC - 0.5 V),

RL =1 MΩ

T = 25 °C

109

-40 °C < T < 125 °C

VOH

High level output voltage

T = 25 °C

-40 °C < T < 125 °C

535

VOL

Low level output voltage

T = 25 °C

-40 °C < T < 125 °C

935

Iout

Isink

Vout = VCC, T = 25 °C

Vout = VCC, -40 °C < T < 125 °C

Isource

Vout = 0 V, T = 25 °C

Vout = 0 V, -40 °C < T < 125 °C

ICC

Supply current (per channel)

Vout =VCC/2, RL >1 MΩ

T = 25 °C

µA

-40 °C < T < 125 °C

AC performance

GBP

Gain bandwidth product

RL =10kΩ, CL = 100 pF

0.73

1.15

MHz

Unity gain frequency

RL =10kΩ, CL = 100 pF

900

kHz

Φm

Phase margin

RL =10kΩ, CL = 100 pF

degrees

Gain margin

RL =10kΩ, CL = 100 pF

Slew rate

RL =10kΩ, CL = 100 pF,

Vout = 0.5 V to VCC -0.5V

0.89

μs

∫ e

Low-frequency peak-to-

peak input noise

Bandwidth: f = 0.1 to 10 Hz

µV

Equivalent input noise

voltage

f = 1 kHz

f = 10 kHz

THD+N

Total harmonic distortion +

noise

Follower configuration, fin = 1 kHz,

RL = 100 kΩ, Vicm = VCC/2,

BW = 22 kHz, Vout = 1 Vpp

0.002

See Section 4.6: Input offset voltage drift over temperature on page 15.

Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and

assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration.

Guaranteed by design.

Table 6.

Electrical characteristics at VCC+ = +5 V with VCC- = 0 V, Vicm = VCC/2, T = 25 °C,

and RL =10kΩ connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

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