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TSV522IST 数据表(PDF) 16 Page - STMicroelectronics |
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TSV522IST 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 27 page ![]() Application information TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A 16/27 Doc ID 022743 Rev 1 4.7 Long term input offset voltage drift In a product reliability evaluation, two types of stress acceleration are usable: ● Voltage acceleration, by changing the applied voltage ● Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature The voltage acceleration has been defined based on JEDEC results, and is defined by: Equation 2 where: AFV is the voltage acceleration factor ß is the voltage acceleration constant in 1/V, constant technology parameter VS is the stress voltage used for the accelerated test VU is the use voltage for the application The temperature acceleration is driven by the Arrhenius model, and is defined by: Equation 3 where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on failure rate k is the Boltzmann’s constant TU is the temperature of the die when VU is used TS is the temperature of the die under temperature stress The final acceleration factor, AF, is the multiplication of these two acceleration factors, which is: Equation 4 AF = AFT x AFV Based on this AF, calculated following the defined usage temperature and usage voltage of the product, the 1000 h duration of the stress corresponds to a number of equivalent months of usage. Equation 5 Months = AF x 1000 h x 12 months / (24h x 365.25 days) A FV e β VS VU – () ⋅ = A FT e E a k ------ 1 TU ------ 1 TS ------ – ⎝⎠ ⎛⎞ ⋅ = |
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