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BQ76PL536APAPR 数据表(PDF) 47 Page - Texas Instruments |
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BQ76PL536APAPR 数据表(HTML) 47 Page - Texas Instruments |
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47 / 60 page ![]() Enable Group3 Write: Write: 0x35 to SHDW_CTRL (0x3a) Host enables write to USER Block Write: 0x91 to E_EN @0x3f Apply 7 V to LDOD1(2) pin Host writes data to Registers in USER Block 0x40–0x47 Write data to Registers Write: 0xnn to 0x4x ADDR++ ADDR > 0x4b? No Yes Verify Data in 0x40–0x47 Copy EPROM back to Registers Write 0x27 to SHDW_CTRL (0x3a) Read Register block 0x40–0x4b Contents match programmed value? Yes No Verify ECC bits Read DEVICE_STATUS [ECC_COR] Read ALERT_STATUS [PARITY] Read ALERT_STATUS [PARITY] All == 0? Yes No SUCCESS FAIL Programming complete Nominal time ~ 2 ms to 3 ms Remove 7 V from LDOD1(2) pins bq76PL536A www.ti.com SLUSAD3A – JUNE 2011 – REVISED AUGUST 2012 PROGRAMMING THE EPROM CONFIGURATION REGISTERS The bq76PL536A has a block of OTP-EPROM that is used for configuring the operation of the bq76PL536A. Programming of the EPROM should take place during pack/system manufacturing. A 7-V (VPP) pulse is required on the PROG pin. The part uses an internal window comparator to check the voltage, and times the internal pulse delivered to the EPROM array. The user first writes the desired values to all of the equivalent Group3 protected register addresses. The desired data is written to the appropriate address by first applying 7 V to the LDOD1(2) pins. Programming then performed by writing to the EE_EN register (address 0x3f) with data 0x91. After a time period > 1500 µs, the 7 V is removed. Nominally, the voltage pulse should be applied for approximately 2–3 ms. Applying the voltage for an extended period of time may lead to device damage. The write is self-timed internally after receipt of the command. The following flow chart illustrates the procedure for programming. Figure 16. EPROM Programming Copyright © 2011–2012, Texas Instruments Incorporated Submit Documentation Feedback 47 Product Folder Links :bq76PL536A |
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