BDP948 datasheet(3/8 Pages) INFINEON

3 / 8 page

2011-10-05

BDP948_BDP950_BDP954

Electrical Characteristics

at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BDP948

IC = 10 mA, IB = 0 , BDP950

IC = 10 mA, IB = 0 , BDP954

V(BR)CEO

100

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BDP948

IC = 100 µA, IE = 0 , BDP950

IC = 100 µA, IE = 0 , BDP954

V(BR)CBO

120

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 45 V, IE = 0

VCB = 45 V, IE = 0 , TA = 150 °C

ICBO

0.1

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain1)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 1 A, VCE = 2 V BDP948,BDP950

BDP954

IC = 1 A, VCE = 2 V

hFE

475

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VCEsat

0.5

Base emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VBEsat

1.3

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 100 MHz

Ccb

1Pulse test: t < 300µs; D < 2%

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