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BDP948 数据表(PDF) 4 Page - Infineon Technologies AG |
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BDP948 数据表(HTML) 4 Page - Infineon Technologies AG |
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4 / 8 page ![]() 2011-10-05 4 BDP948_BDP950_BDP954 DC current gain hFE = ƒ(IC) VCE = 2 V 10 0 10 1 10 2 10 3 10 4 mA IC 1 10 2 10 3 10 - 100 °C 25 °C -50 °C Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 0 0.1 0.2 0.3 0.4 V 0.6 VCEsat 0 10 1 10 2 10 3 10 4 10 mA 100°C 25°C -50°C Base-emitter saturation voltage IC = (VBEsat), hFE = 10 0 0.2 0.4 0.6 0.8 1 V 1.3 VBEsat 0 10 1 10 2 10 3 10 4 10 mA -50°C 25°C 100°C Collector current IC = ƒ(VBE) VCE = 2 V 0 0.2 0.4 0.6 0.8 1 V 1.3 VBE 0 10 1 10 2 10 3 10 4 10 mA -50°C 25°C 100°C |
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