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BDP948 数据表(PDF) 2 Page - Infineon Technologies AG |
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BDP948 数据表(HTML) 2 Page - Infineon Technologies AG |
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2 / 8 page ![]() 2011-10-05 2 BDP948_BDP950_BDP954 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage BDP948 BDP950 BDP954 VCEO 45 60 100 V Collector-base voltage BDP948 BDP950 BDP954 VCBO 45 60 120 Emitter-base voltage VEBO 5 Collector current IC 3 A Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 mA Peak base current IBM 500 Total power dissipation- TS ≤ 100 °C Ptot 5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 10 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
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