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VMV3 数据表(PDF) 21 Page - Microsemi Corporation |
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VMV3 数据表(HTML) 21 Page - Microsemi Corporation |
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21 / 212 page ![]() Military ProASIC3/EL Low Power Flash FPGAs Revision 3 2-7 Thermal Characteristics Introduction The temperature variable in the Designer software refers to the junction temperature, not the ambient temperature. This is an important distinction because dynamic and static power consumption cause the chip junction temperature to be higher than the ambient temperature. EQ 1 can be used to calculate junction temperature. TJ = Junction Temperature = T + TA EQ 1 where: TA = Ambient Temperature T = Temperature gradient between junction (silicon) and ambient T = ja * P ja = Junction-to-ambient of the package. ja numbers are located in Table 2-4. P = Power dissipation Package Thermal Characteristics The device junction-to-case thermal resistivity is jc and the junction-to-ambient air thermal resistivity is ja. The thermal characteristics for ja are shown for two air flow rates. The recommended maximum junction temperature is 125°C. EQ 2 shows a sample calculation of the recommended maximum power dissipation allowed for a 484-pin FBGA package at military temperature and in still air. EQ 2 Maximum Power Allowed Max. junction temp. ( C) Max. ambient temp. (C) – ja(C/W) --------------------------------------------------------------------------------------------------------------------------------- 125 C70C – 20.6 C/W ----------------------------------- 2.670 = = = Table 2-4 • Package Thermal Resistivities Package Type Device Pin Count jc ja Units Still Air 200 ft./min. 500 ft./min. Very Thin Quad Flat Pack (VQ100) A3P250 100 10.0 35.3 29.4 27.1 C/W Plastic Quad Flat Pack (PQ208)* A3P1000 208 3.8 16.2 13.3 11.9 C/W Fine Pitch Ball Grid Array (FBGA) A3P1000 144 6.3 31.6 26.2 24.2 C/W A3PE600L 484 9.5 27.5 21.9 20.2 C/W A3PE3000L 484 4.7 20.6 15.7 14.0 C/W A3PE3000L 896 2.4 13.6 10.4 9.4 C/W * Embedded heatspreader |
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