 2004-2013 Microchip Technology Inc.

DS21906C-page 3

MCP102/103/121/131

MCP1XX-195

1.872

1.900

1.929

V

1.853

1.900

1.948

V

MCP1XX-240

2.285

2.320

2.355

V

2.262

2.320

2.378

V

Note 2

MCP1XX-270

2.591

2.630

2.670

V

2.564

2.630

2.696

V

Note 2

MCP1XX-300

2.886

2.930

2.974

V

2.857

2.930

3.003

V

Note 2

MCP1XX-315

3.034

3.080

3.126

V

3.003

3.080

3.157

V

Note 2

MCP1XX-450

4.314

4.380

4.446

V

4.271

4.380

4.490

V

Note 2

MCP1XX-475

4.561

4.630

4.700

V

4.514

4.630

4.746

V

Note 2

—

±100

—

ppm/°C

Threshold

Hysteresis

min. = 1%,

max = 6%)

MCP1XX-195

0.019

—

0.114

V

MCP1XX-240

0.023

—

0.139

V

MCP1XX-270

0.026

—

0.158

V

MCP1XX-300

0.029

—

0.176

V

MCP1XX-315

0.031

—

0.185

V

MCP1XX-450

0.044

—

0.263

V

MCP1XX-475

0.046

—

0.278

V

RST Low-level Output Voltage

——

0.4

V

RST High-level Output Voltage

(MCP102 and MCP103 only)

—

—

V

only (push-pull output)

Internal Pull-up Resistor

(MCP131 only)

—95

—

k



Open-drain High Voltage on Output

(MCP121 only)

—

—

applied

 100s,

current into pin limited to 2 mA, 25°C

operation recommended

(Note 5, Note 6)

Open-drain Output Leakage Current

(MCP121 only)

—0.1

—

µA

DC CHARACTERISTICS (CONTINUED)

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note

1:

Trip point is ±1.5% from typical value.

2:

Trip point is ±2.5% from typical value.

3:

RST output is forced low. There is a current through the internal pull-up resistor.

4:

This includes the current through the internal pull-up resistor and the reset power-up timer.

5:

gramming™ (ICSP™) (see device-specific programming specifications for voltage requirements). This specification

limited to 2 mA and it is recommended that the device operational temperature be maintained between 0°C to 70°C

(+25°C preferred). For additional information, please refer to Figure 2-33.

6:

This parameter is established by characterization and not 100% tested.