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MCP602-E/P 数据表(PDF) 3 Page - Microchip Technology |
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MCP602-E/P 数据表(HTML) 3 Page - Microchip Technology |
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3 / 34 page  © 2007 Microchip Technology Inc. DS21314G-page 3 MCP601/1R/2/3/4 AC CHARACTERISTICS MCP603 CHIP SELECT (CS) CHARACTERISTICS FIGURE 1-1: MCP603 Chip Select (CS) Timing Diagram. Electrical Specifications: Unless otherwise indicated, T A = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, and RL = 100 kΩ to VL, CL = 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions Frequency Response Gain Bandwidth Product GBWP — 2.8 — MHz Phase Margin PM — 50 — ° G = +1 V/V Step Response Slew Rate SR — 2.3 — V/µs G = +1 V/V Settling Time (0.01%) tsettle — 4.5 — µs G = +1 V/V, 3.8V step Noise Input Noise Voltage Eni —7 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —29 — nV/ √Hz f = 1 kHz eni —21 — nV/ √Hz f = 10 kHz Input Noise Current Density ini —0.6 — fA/ √Hz f = 1 kHz Electrical Specifications: Unless otherwise indicated, T A = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, VL = VDD/2, and RL = 100 kΩ to VL, CL = 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS — 0.2 VDD V CS Input Current, Low ICSL -1.0 — — µA CS = 0.2VDD CS High Specifications CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH —0.7 2.0 µA CS = VDD Shutdown VSS current IQ_SHDN -2.0 -0.7 — µA CS = VDD Amplifier Output Leakage in Shutdown IO_SHDN —1 — nA Timing CS Low to Amplifier Output Turn-on Time tON —3.1 10 µs CS ≤ 0.2V DD, G = +1 V/V CS High to Amplifier Output High-Z Time tOFF —100 — ns CS ≥ 0.8V DD, G = +1 V/V, No load. Hysteresis VHYST —0.4 — V VDD = 5.0V CS tOFF VOUT tON Hi-Z Hi-Z IDD 2nA 230 µA Output Active ISS -700 nA -230 µA CS 700 nA 2nA Current (typical) (typical) (typical) (typical) (typical) (typical) |
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