LT1818 datasheet(28/28 Pages) LINER

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LT1806/LT1807

18067fc

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com

LT 0809 REV C • PRINTED IN USA

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DESCRIPTION

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ICC = 2.5mA

TYPICAL APPLICATION

FET Input, Fast, High Gain Photodiode Ampliﬁer

Figure 10 shows a fast, high gain transimpedance

ampliﬁer applied to a photodiode. A JFET buffer is used

for its extremely low input bias current and high speed.

The LT1097 and 2N3904 keep the JFET biased at IDSS

for zero offset and lowest voltage noise. The JFET then

drives the LT1806, with RF closing the high speed loop

back to the JFET input and setting the transimpedance

gain. C4 helps improve the phase margin of the fast loop.

Output voltage noise density was measured as 9nV/√Hz

with RF short circuited. With RF varied from 100k to 1M,

total output noise was below 1mVRMS measured over a

10MHz bandwidth. Table 4 shows results achieved with

various values of RF and Figure 11 shows the time domain

response with RF = 499k.

Table 4. Results Achieved for Various RF, 1.2V Output Step

10% to 90%

RISE TIME

–3dB

BANDWIDTH

100k

64ns

6.8MHz

200k

94ns

4.6MHz

499k

154ns

3MHz

263ns

1.8MHz

Figure 10. Fast, High Gain Photodiode Ampliﬁer

–

10k

10M

SIEMENS/

INFINEON

SFH213FA

PHOTODIODE

49.9Ω

50W

18067 F10

33Ω

2.4k

–

2200pF

0.1μF

100pF

3pF

LT1097

–

VOUT

2N5486

–

LT1806

2N3904

*ADJUST PARASITIC CAPACITANCE AT

RF FOR DESIRED RESPONSE

CHARACTERISTICS

VS = 5V

Figure 11. Step Response

with RF = 499k

20ns/DIV

100mV/DIV

18067 F11

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