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STS8DN3LLH5 数据表(PDF) 7 Page - STMicroelectronics |
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STS8DN3LLH5 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 12 page ![]() STS8DN3LLH5 Electrical characteristics Doc ID 16967 Rev 1 7/12 Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics VGS 6 4 2 0 0 2 Qg(nC) (V) 8 8 4 6 10 VDD=15V ID=11A 10 12 AM04958v1 C 600 400 200 0 0 10 VDS(V) (pF) 800 20 Ciss Coss Crss 1000 TJ=25°C f=1MHz AM04959v1 VGS(th) 0.7 0.6 0.5 0.4 -50 0 TJ(°C) (norm) 0.8 50 100 150 0.9 1.0 1.1 1.2 ID=250µA AM04960v1 RDS(on) 1.2 1.0 0.8 0.6 -50 0 TJ(°C) (norm) 50 100 150 1.4 1.6 1.8 ID=5.5A VGS=10V AM04961v1 VSD 0 4 ISD(A) (V) 2 10 6 8 0.4 0.5 0.6 0.7 0.8 0.9 TJ=-50°C TJ=175°C TJ=25°C AM04961v1 |
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