STS8DN3LLH5 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STS8DN3LLH5

功能描述	Dual N-channel 30 V, 0.0155 廓, 10 A, SO-8 STripFET??V Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 12 page

Electrical characteristics

STS8DN3LLH5

4/12

Doc ID 16967 Rev 1

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS =max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 5 A

VGS= 4.5 V, ID= 5 A

0.0155

0.020

0.019

0.022

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

724

132

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 10 A

VGS= 4.5 V

Figure 14

5.4

2.1

Intrinsic gate resistance

f=1 MHz gate dc bias=0

test signal level = 20 mV

open drain

-3.3

Ω

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