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STS8DN3LLH5 数据表(PDF) 1 Page - STMicroelectronics |
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STS8DN3LLH5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() January 2010 Doc ID 16967 Rev 1 1/12 12 STS8DN3LLH5 Dual N-channel 30 V, 0.0155 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STS8DN3LLH5 30 V < 0.019 Ω 10 A (1) 1. The value is rated according Rthj-pcb SO-8 Table 1. Device summary Order code Marking Package Packaging STS8DN3LLH5 8DN3LL SO-8 Tape and reel www.st.com |
类似零件编号 - STS8DN3LLH5 |
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类似说明 - STS8DN3LLH5 |
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