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BQ30Z554DBT-R1 数据表(PDF) 2 Page - Texas Instruments

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部件名 BQ30Z554DBT-R1
功能描述  2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager
PDF  29 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

BQ30Z554DBT-R1 数据表(HTML) 2 Page - Texas Instruments

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bq30z554-R1
SLUSBD4 – OCTOBER 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
ORDERING INFORMATION(1)
PACKAGE
PACKAGE
TA
PART NUMBER
PACKAGE
DESIGNATOR
MARKING
TUBE(2)
TAPE AND REEL(3)
–40°C to 85°C
bq30z554-R1
TSSOP–30
DBT
bq30z554-R1
bq30z554DBT-R1
bq30z554DBTR-R1
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of the document, or see the TI
website at www.ti.com.
(2)
A single tube quantity is 50 units.
(3)
A single reel quantity is 2000 units.
THERMAL INFORMATION
bq30z554-R1
THERMAL METRIC(1)
TSSOP
UNITS
30 PINS
θJA, High K
Junction-to-ambient thermal resistance(2)
73.1
θJC(top)
Junction-to-case(top) thermal resistance (3)
17.5
θJB
Junction-to-board thermal resistance (4)
34.5
°C/W
ψJT
Junction-to-top characterization parameter (5)
0.3
ψJB
Junction-to-board characterization parameter (6)
30.3
θJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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