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BQ30Z554DBT-R1 数据表(PDF) 12 Page - Texas Instruments |
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BQ30Z554DBT-R1 数据表(HTML) 12 Page - Texas Instruments |
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12 / 29 page  bq30z554-R1 SLUSBD4 – OCTOBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS: PTC Thermistor Support Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 3.8 V to 25 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VPTC = 0 to 2 V, RPTC PTC TA = –40 °C to 110 °C 1.3 2 2.7 M Ω VPTC = 0 to 2 V IO(PTC) PTC TA = –40 °C to 110 °C –450 –370 –230 nA tPTC PTC Blanking Delay TA = –40 °C to 110 °C 60 80 110 ms ELECTRICAL CHARACTERISTICS: COULOMB COUNTER Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 3.8 V to 25 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input voltage range SRP – SRN –0.20 0.25 V Conversion time Single conversion 250 ms Resolution (no missing codes) 16 bits Effective resolution Single conversion, signed 15 bits VIN Offset error Post Calibrated 10 µV Offset error drift 0.3 0.5 µV/°C Full-scale error –0.8% 0.2% 0.8% Full-scale error drift 150 PPM/°C Effective input resistance 2.5 M Ω ELECTRICAL CHARACTERISTICS: VC1, VC2, VC3, VC4 Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 3.8 V to 25 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VC4 – VC3, VC3 – VC2, VC2 – Input voltage range –0.20 8 V VC1, VC1 – VSS Conversion time Single conversion 32 ms VIN Resolution (no missing codes) 16 bits Effective resolution Single conversion, signed 15 bits RDS(ON) for internal FET at VDS > VDS = VC4 – VC3, VC3 – VC2, 200 310 430 Ω 2 V VC2 – VC1, VC1 – VSS R(BAL) RDS(ON) for internal FET at VDS > VDS = VC4 – VC3, VC3 – VC2, 60 125 230 Ω 4 V VC2 – VC1, VC1 – VSS ELECTRICAL CHARACTERISTICS: TS1, TS2 Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 3.8 V to 25 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT R Internal Pull Up Resistor 16.5 17.5 19.0 K Ω Internal Pull Up Resistor Drift from RDRIFT 200 PPM/°C 25 °C RPAD Internal Pin Pad resistance 84 Ω 12 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links :bq30z554-R1 |
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