This is information on a product in full production.

March 2013

DocID024400 Rev 1

1/13

13

STL12P6F6

P-channel 60 V, 0.13

Ω typ., 3 A STripFET™ VI DeepGATE™

Power MOSFET in a PowerFLAT™ 5x6 package

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Qg industry benchmark

• Extremely low on-resistance R

DS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

developed using the 6

th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R

DS(on)

in all packages.

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

PowerFLAT™ 5x6

1

2

3

4

Order code

STL12P6F6

60 V

0.16

Ω @ 10 V

3 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STL12P6F6

12P6F6

PowerFLAT 5x6

Tape and reel

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