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STL12P6F6 数据表(PDF) 3 Page - STMicroelectronics |
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STL12P6F6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() DocID024400 Rev 1 3/13 STL12P6F6 Electrical ratings 1 Electrical ratings Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 60 V V GS Gate-source voltage ± 20 V I D (1) 1. The value is according to R thj-case Drain current (continuous) at T C = 25 °C 4 A I D (1) Drain current (continuous) at T C = 100 °C 7 A I D (2) 2. The value is according to R thj-pcb Drain current (continuous) at T pcb = 25 °C 12 A I D (2) Drain current (continuous) at T pcb = 100 °C 7 A I DM (2)(3) 3. Pulse width is limited by safe operating area. Drain current (pulsed) 48 A P TOT Total dissipation at T C = 25 °C 75 W P TOT Total dissipation at T pcb = 25 °C 4.8 W T j P stg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 2 °C/W R thj-pcb (1) 1. When mounted on FR-4 board of 15 mm 2 , 2 Oz Cu, t<10 sec Thermal resistance junction-pcb max 31.3 °C/W |
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