Electrical characteristics

STL12P6F6

4/13

DocID024400 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified).

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

(V

GS

= 0)

I

D

= 250 μA60

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 60 V

V

DS

= 60 V, T

C

=125 °C

1

10

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 20 V

±100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA2

4

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 1.5 A

0.13

0.16

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 48 V, f = 1 MHz,

V

GS

= 0

-

340

-

pF

C

oss

Output capacitance

-

40

-

pF

C

rss

Reverse transfer

capacitance

-20

-

pF

Q

g

Total gate charge

V

DD

= 48 V, I

D

= 3 A,

V

GS

= 10 V

(see

Figure 3)

-6.4

-

nC

Q

gs

Gate-source charge

-

1.7

-

nC

Q

gd

Gate-drain charge

-

1.7

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 48 V, I

D

= 1.5 A,

R

G

= 4.7

Ω, V

GS

= 10 V

(see

Figure 2)

-6.4

-

ns

t

r

Rise time

-

5.3

-

ns

t

d(off)

Turn-off delay time

-

14

-

ns

t

f

Fall time

-

3.7

-

ns