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STM32F051K4 数据表(PDF) 43 Page - STMicroelectronics |
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STM32F051K4 数据表(HTML) 43 Page - STMicroelectronics |
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43 / 104 page ![]() Electrical characteristics STM32F051x 44/105 Doc ID 022265 Rev 3 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 21 are derived from tests performed under the ambient temperature condition summarized in Table 20. 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 22 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 20. Table 21. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate 0 ∞ VDDA fall time rate 20 ∞ Table 22. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR (1) 1. The PDR detector monitors VDD and also VDDA (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge 1.8(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst (1) PDR hysteresis - 40 - mV tRSTTEMPO (3) 3. Guaranteed by design, not tested in production. Reset temporization 1.5 2.5 4.5 ms Table 23. Programmable voltage detector characteristics Symbol Parameter Conditions Min(1) Typ Max(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V |
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