STM32F051K4 datasheet(44/104 Pages) STMICROELECTRONICS

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STM32F051x

Electrical characteristics

Doc ID 022265 Rev 3

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6.3.4

Embedded reference voltage

The parameters given in Table 24 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 20.

6.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 11: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

VPVD5

PVD threshold 5

Rising edge

2.57

2.68

2.79

Falling edge

2.47

2.58

2.69

VPVD6

PVD threshold 6

Rising edge

2.66

2.78

2.9

Falling edge

2.56

2.68

2.8

VPVD7

PVD threshold 7

Rising edge

2.76

2.88

Falling edge

2.66

2.78

2.9

VPVDhyst

(2)

PVD hysteresis

100

IDD(PVD)

PVD current consumption

0.15

0.26

µA

Data based on characterization results only, not tested in production.

Guaranteed by design, not tested in production.

Table 23.

Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

Table 24.

Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT Internal reference voltage

–40 °C < TA < +105 °C

1.16

1.2

1.25

–40 °C < TA < +85 °C

1.16

1.2

1.24(1)

Data based on characterization results, not tested in production.

TS_vrefint

(2)

Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when

reading the internal

reference voltage

-5.1

17.1(3)

Guaranteed by design, not tested in production.

µs

VRERINT

Internal reference voltage

spread over the

temperature range

VDD = 3 V ±10 mV

10(3)

TCoeff

Temperature coefficient

100(3)

ppm/°C

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