STM32F415RG datasheet(141/186 Pages) STMICROELECTRONICS

141 / 186 page

DocID022063 Rev 4

141/186

STM32F415xx, STM32F417xx

Electrical characteristics

Figure 57. Asynchronous multiplexed PSRAM/NOR read waveforms

th(A_NWE)

Address hold time after FSMC_NWE high

THCLK– 2

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

1.5

th(BL_NWE)

FSMC_BL hold time after FSMC_NWE high

THCLK– 1

tv(Data_NE)

Data to FSMC_NEx low to Data valid

THCLK+3

th(Data_NWE)

Data hold time after FSMC_NWE high

THCLK–1

tv(NADV_NE)

FSMC_NEx low to FSMC_NADV low

tw(NADV)

FSMC_NADV low time

THCLK+0.5

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Table 77. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

3THCLK–1

3THCLK+1

tv(NOE_NE) FSMC_NEx low to FSMC_NOE low

2THCLK–0.5

2THCLK+0.5

tw(NOE)

FSMC_NOE low time

THCLK–1

THCLK+1

th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time

tv(A_NE)

FSMC_NEx low to FSMC_A valid

Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

NBL

Data

FSMC_NBL[1:0]

FSMC_AD[15:0]

tv(BL_NE)

th(Data_NE)

Address

FSMC_A[25:16]

tv(A_NE)

FSMC_NWE

t v(A_NE)

ai14892b

Address

FSMC_NADV

t v(NADV_NE)

tw(NADV)

tsu(Data_NE)

th(AD_NADV)

FSMC_NE

FSMC_NOE

tw(NE)

t w(NOE)

tv(NOE_NE)

t h(NE_NOE)

th(A_NOE)

th(BL_NOE)

tsu(Data_NOE)

th(Data_NOE)

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