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MPC8347ECVRALDB 数据表(PDF) 85 Page - Freescale Semiconductor, Inc |
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MPC8347ECVRALDB 数据表(HTML) 85 Page - Freescale Semiconductor, Inc |
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85 / 99 page ![]() MPC8347EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 12 Freescale Semiconductor 85 Thermal Table 66 provides the package thermal characteristics for the 620 29 × 29 mm PBGA of the MPC8347EA. 20.2 Thermal Management Information For the following sections, PD = (VDD × IDD) + PI/O where PI/O is the power dissipation of the I/O drivers. See Table 5 for I/O power dissipation values. Junction-to-package natural convection on top ψ JT 1 °C/W 6 Notes: 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal. 3. Per JEDEC JESD51-6 with the board horizontal, 1 m/s is approximately equal to 200 linear feet per minute (LFM). 4. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). 6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT. Table 66. Package Thermal Characteristics for PBGA Parameter Symbol Value Unit Notes Junction-to-ambient natural convection on single-layer board (1s) RθJA 21 °C/W 1, 2 Junction-to-ambient natural convection on four-layer board (2s2p) RθJMA 15 °C/W 1, 3 Junction-to-ambient (at 200 ft/min) on single-layer board (1s) RθJMA 17 °C/W 1, 3 Junction-to-ambient (at 200 ft/min) on four-layer board (2s2p) RθJMA 12 °C/W 1, 3 Junction-to-board thermal RθJB 6 °C/W 4 Junction-to-case thermal RθJC 5 °C/W 5 Junction-to-package natural convection on top ψ JT 5 °C/W 6 Notes 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal. 3. Per JEDEC JESD51-6 with the board horizontal. 4. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1). 6. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written as Psi-JT. Table 65. Package Thermal Characteristics for TBGA (continued) Characteristic Symbol Value Unit Notes |
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