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L6235PD 数据表(PDF) 11 Page - STMicroelectronics

部件名 L6235PD
功能描述  DMOS driver for 3-phase brushless DC motor
PDF  35 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

L6235PD 数据表(HTML) 11 Page - STMicroelectronics

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L6235
Circuit description
35
5
Circuit description
5.1
Power stages and charge pump
The L6235 device integrates a 3-phase bridge, which consists of 6 Power MOSFETs
connected as shown in Figure 1: Block diagram on page 3. Each power MOS has an
RDS(ON) = 0.3 (typical value at 25 °C) with intrinsic fast freewheeling diode. Switching
patterns are generated by the PWM current controller and the hall effect sensor decoding
logic (see Section 6: PWM current control on page 13 and Section 8: Decoding logic on
page 18). Cross conduction protection is implemented by using a deadtime (tDT = 1 µs
typical value) set by internal timing circuit between the turn off and turn on of two Power
MOSFETs in one leg of a bridge.
Pins VSA and VSB MUST be connected together to the supply voltage (VS).
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 KHz
(typically) with 10 V amplitude. Recommended values/part numbers for the charge pump
circuit are shown in Table 6.
Figure 5. Charge pump circuit
Table 6. Charge pump external component values
Component
Value
CBOOT
22 0nF
CP
10 nF
RP
100
D1
1N4148
D2
1N4148
D2
CBOOT
D1
RP
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328



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