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STM8AF528ATAY 数据表(PDF) 87 Page - STMicroelectronics |
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STM8AF528ATAY 数据表(HTML) 87 Page - STMicroelectronics |
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87 / 114 page  DocID14395 Rev 10 87/114 STM8AF52/62xx, STM8AF51/61xx Electrical characteristics 113 Electromagnetic interference (EMI) Emission tests conform to the SAE J 1752/3 standard for test software, board layout and pin loading. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 48. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fCPU(1) 1. Data based on characterization results, not tested in production. 8 MHz 16 MHz 24 MHz SEMI Peak level VDD = 5 V, TA = 25 °C, LQFP80 package conforming to SAE J 1752/3 0.1 MHz to 30 MHz 15 17 22 dBμV 30 MHz to 130 MHz 18 22 16 130 MHz to 1 GHz -1 3 5 SAE EMI level — 2 2.5 2.5 Table 49. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Data based on characterization results, not tested in production Uni t VESD(HBM) Electrostatic discharge voltage (human body model) TA = 25 °C, conforming to JESD22-A114 3A 4000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to JESD22-C101 3 500 VESD(MM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to JESD22-A115 B 200 |
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