GP401LSS18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

2/11

Test Conditions

DC junction to case

DC junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M4

Parameter

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Thermal resistance - case to heatsink (per module)

Junction temperature

Storage temperature range

Screw torque

THERMAL AND MECHANICAL RATINGS

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

T

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Test Conditions

V

-

DC, T

DC, T

1ms, T

T

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Units

V

V

A

A

A

W

V

Max.

1800

±20

600

400

800

2980

4000

Parameter

Collector-emitter voltage

Gate-emitter voltage

Continuous collector current

Peak collector current

Max. power dissipation

Isolation voltage

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

˚C

Nm

Nm

Max.

42

80

15

125

125

125

5

2

Min.

-

-

-

-

-

–40

-

-