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GP401LSS18 数据表(PDF) 7 Page - Dynex Semiconductor

部件名 GP401LSS18
功能描述  Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
PDF  11 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

GP401LSS18 数据表(HTML) 7 Page - Dynex Semiconductor

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GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/11
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
0
400
100
200
Collector current, IC - (A)
0
125
Tcase = 25˚C
VGE = ±15V
VCE = 900V
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
A
B
C
50
25
75
100
175
200
150
250
350
300
150
50
0
400
100
200
Collector current, IC - (A)
0
125
Tcase = 125˚C
VGE = ±15V
VCE = 900V
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 4.3Ω
A
B
C
50
25
75
100
175
150
200
250
225
250
350
300
150
50
0
10
20
30
40
50
60
0
50
100
150
200
250
300
350
400
Collector current, IT - (A)
Tcase = 25˚C
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.3Ω
0
300
100
50
200
150
250
Collector current, IC - (A)
0
1200
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.3Ω
td(on)
tr
tf
td(off)
600
400
200
800
1000
350
400



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