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GP401LSS18 数据表(PDF) 4 Page - Dynex Semiconductor

部件名 GP401LSS18
功能描述  Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
PDF  11 Pages
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制造商  DYNEX [Dynex Semiconductor]
网页  http://www.dynexsemi.com
标志 DYNEX - Dynex Semiconductor

GP401LSS18 数据表(HTML) 4 Page - Dynex Semiconductor

  GP401LSS18 Datasheet HTML 1Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 2Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 3Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 4Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 5Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 6Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 7Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 8Page - Dynex Semiconductor GP401LSS18 Datasheet HTML 9Page - Dynex Semiconductor Next Button
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GP401LSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/11
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
1100
350
200
650
400
180
85
Typ.
900
280
150
500
200
140
65
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 400A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.3Ω
L ~ 100nH
I
F = 400A, VR = 50% VCES,
dI
F/dt = 2500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T
case = 25˚C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
1200
500
230
800
400
260
115
Typ.
1010
390
180
660
310
210
90
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 400A
V
GE = ±15V
V
CE = 900V
R
G(ON) = RG(OFF) = 4.3Ω
L ~ 100nH
I
F = 400A, VR = 50% VCES,
dI
F/dt = 2500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case = 25˚C unless stated otherwise.



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