MAS110S

3/9

DIODE CURRENT RATINGS

Symbol

Parameter

Conditions

Units

Max.

I

T(AV)

Mean forward current

I

T(RMS)

RMS value

Half wave resistive load, T

112

A

T

175

A

DIODE SURGE RATINGS - PER ARM

Conditions

10ms half sine; T

V

Max.

Units

Symbol

Parameter

I

FSM

Surge (non-repetitive) forward current

I

3.5

kA

Conditions

At 600A, T

Max.

Units

Symbol

Parameter

V

FM

Forward voltage

I

RRM

Peak reverse current

70

mA

2.65

V

At V

t

rr

Reverse recovery time

1.3

µs

T

V

TO

Threshold voltage

1.6

V

At T

Forward slope resistance

1.5

m

Ω

At T

r

T

DIODE DYNAMIC CHARACTERISTICS

THYRISTOR GATE TRIGGER CHARACTERISTICS AND RATINGS

V

T

Conditions

Parameter

Symbol

V

GT

Gate trigger voltage

V

I

GT

Gate trigger current

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current

Anode positive with respect to cathode

P

GM

Peak gate power

-

P

G(AV)

Mean gate power

-

4.0

V

-

250

mA

-

7.0

V

-10

A

-50

W

-15

W

Typ.

Max.

Units

Average timing = 10ms