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MAS110S 数据表(PDF) 6 Page - Dynex Semiconductor |
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MAS110S 数据表(HTML) 6 Page - Dynex Semiconductor |
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6 / 9 page ![]() MAS110S 6/9 1.0 10 100 1000 Pulse width tp - (µs) 1.0 10 100 1000 ITM = 2000A ITM = 1000A ITM = 600A ITM = 400A ITM = 200A ITM = 100A 0.01 0.1 1.0 10 Gate trigger current IGT - (A) 0.1 1.0 10 100 PGM = 50W Fig.5 Gate characteristics Fig.6 Sinusoidal energy per pulse (thyristor only) |
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