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IRF634 数据表(PDF) 3 Page - STMicroelectronics |
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IRF634 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() Obsolete Product(s) - Obsolete Product(s) IRF634 - IRF634FP Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit IRF634 IRF634FP VDS Drain-source voltage (VGS = 0) 250 V VDGR Drain-gate voltage (RGS = 20 kΩ)250 V VGS Gate- source voltage ± 20 V ID Drain current (continuos) at TC = 25°C 8 8(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuos) at TC = 100°C 5 5(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 32 32(1) A PTOT Total dissipation at TC = 25°C 80 30 W Derating factor 0.64 0.24 W/°C dv/dt (3) 3. ISD ≤8A, di/dt ≤300 A/ms, VDD ≤V(BR)DSS, Tj ≤Tjmax Peak diode recovery voltage slope 5 V/ns VISO Insulation withstand voltage (DC) - 2000 V Tstg Storage temperature –65 to 150 °C Tj Max. operating junction temperature 150 °C Table 2. Thermal data TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.56 4.11 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 8A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 300 mJ |
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