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IRF634 数据表(PDF) 5 Page - STMicroelectronics |
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IRF634 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page  Obsolete Product(s) - Obsolete Product(s) IRF634 - IRF634FP Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Source-drain current Source-drain Current (pulsed 8 32 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 8 A, VGS = 0 1.7 V trr Reverse recovery time ISD = 8A, di/dt = 100A/µs VDD = 30V, Tj = 150°C 198 ns Qrr Reverse recovery charge 1.1 nC IRRM Reverse recovery current 11.3 A |
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