IRF634 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Obsolete

Product(s)

- Obsolete

Product(s)

Electrical characteristics

IRF634 - IRF634FP

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

250

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max rating

VDS = max rating,

TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 4 A

0.38

0.45

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward

transconductance

VDS > ID(on) x RDS(on)max,

ID =4A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

770

118

td(on)

td(Voff)

Turn-on delay time

Rise time

Turn-off- delay time

Fall time

VDD = 125V, ID = 4A

RG =4.7Ω VGS = 10V

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 200V, ID = 8A,

VGS = 10V

5.2

14.8

51.8

IRF634 数据表(PDF) 4 Page - STMicroelectronics

IRF634 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表下载