Characteristics

ACST2

4/13

DocID13304 Rev 4

Figure 4. On-state rms current versus ambient

temperature

Figure 5. Relative variation of thermal

impedance versus pulse duration TO-220FPAB

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0

25

50

75

100

125

I

α=180 °

Printed circuit board FR4

Natural convection

S

0.01

0.10

1.00

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00 1.0E+01

1.0E+02 1.0E+03

K=[Z

Z

th(j-a)

Z

th(j-c)

TO-220FPAB

Figure 6. Relative variation of thermal

impedance versus pulse duration DPAK

Figure 7. Relative variation of gate trigger,

holding and latching current versus junction

temperature

1.0E-02

1.0E-01

1.0E+00

1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

K=[Z

Z

th(j-a)

Z

th(j-c)

DPAK

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-40 -30 -20 -10

0

10 20 30 40 50 60 70 80 90 100 110 120 130

I

I

GT

I

Typical values

Figure 8. Relative variation of static dV/dt

versus junction temperature

Figure 9. Relative variation of critical rate of

decrease of main current versus reapplied

dV/dt (typical values)

1

10

100

25

50

75

100

125

dV/dt [T

V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

(dI/dt)

V