ACST2 datasheet(5/13 Pages) STMICROELECTRONICS

5 / 13 page

DocID13304 Rev 4

5/13

ACST2

Characteristics

Figure 10. Relative variation of critical rate of

decrease of main current versus junction

temperature

Figure 11. Surge peak on-state current versus

number of cycles

100

125

(dI/dt)

c [Tj]/ (dI/dt)c [Tj=125 °C]

OUT=300 V

Tj(°C)

100

1000

TSM(A)

Non repetitive

j initial=25 °C

Repetitive

C=110 °C

One cycle

t=20ms

Number of cycles

Figure 12. Non repetitive surge peak on-state

current and corresponding value of I²t

Figure 13. On-state characteristics

(maximum values)

0.1

1.0

10.0

100.0

0.01

0.10

1.00

10.00

TSM(A), I²t (A²s)

j initial=25 °C

TSM

I²t

tP(ms)

sinusoidal pulse

with width t < 10 ms

1.E-02

1.E-01

1.E+00

1.E+01

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

ITM(A)

TJ max. :

VTO= 0.90 V

RD= 250 mΩ

Tj=25 °C

Tj=125 °C

VTM(V)

Figure 14. Thermal resistance junction to

ambient versus copper surface under tab DPAK

Figure 15. Relative variation of clamping

voltage VCL versus junction temperature

100

th(j-a)(

°C /W)

DPAK

SCU(cm ²)

Printed circuitboard FR 4,

copperthickness = 35 µm

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

-40

-20

100

120

140

CL [Tj]/ VCL [Tj=25 °C]

Tj(°C)

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