FG256 datasheet(39/197 Pages) MICROSEMI

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SmartFusion Customizable System-on-Chip (cSoC)

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Table 2-28 • I/O Output Buffer Maximum Resistances1

Applicable to MSS I/O Banks

Standard

Drive Strength

RPULL-DOWN

(

Ω)2

RPULL-UP

(

Ω)3

3.3 V LVTTL / 3.3 V LVCMOS

8mA

150

2.5 V LVCMOS

8 mA

100

1.8 V LVCMOS

4 mA

100

112

1.5 V LVCMOS

2 mA

200

224

Notes:

1. These maximum values are provided for informational reasons only. Minimum output buffer resistance

values depend on VCCxxxxIOBx, drive strength selection, temperature, and process. For board design

considerations and detailed output buffer resistances, use the corresponding IBIS models located on the

Microsemi SoC Products Group website.

2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec

3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec

Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances

Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values

VCCxxxxIOBx

R(WEAK PULL-UP)

(

Ω)

R(WEAK PULL-DOWN)

(

Ω)

Min.

Max.

Min.

Max.

3.3 V

10 k

45 k

10 k

45 k

2.5 V

11 k

55 k

12 k

74 k

1.8 V

18 k

70 k

17 k

110 k

1.5 V

19 k

90 k

19 k

140 k

Notes:

1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)

2. R(WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN)

FG256 数据表(PDF) 39 Page - Microsemi Corporation

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