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FG256 数据表(PDF) 90 Page - Microsemi Corporation |
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FG256 数据表(HTML) 90 Page - Microsemi Corporation |
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90 / 197 page ![]() SmartFusion DC and Switching Characteristics 2- 78 R e v i sio n 1 2 Temperature Monitor Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages, with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and 62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions where the SmartFusion cSoC and the sensing diode are at the same temperature. Table 2-94 • Temperature Monitor Performance Specifications Specification Test Conditions Min. Typical Max. Units Input diode temperature range –55 150 °C 233.2 378.15 K Temperature sensitivity 2.5 mV/K Intercept Extrapolated to 0K 0 V Input referred temperature offset error At 25°C (298.15K) ±1 1.5 °C Gain error Slope of BFSL vs. 2.5 mV/K ±1 2.5 % nom. Overall accuracy Peak error from ideal transfer function ±2 ±3 °C Input referred noise At 25°C (298.15K) – no output averaging 4 °C rms Output current Idle mode 100 µA Final measurement phases 10 µA Analog settling time Measured to 0.1% of final value, (with ADC load) From TM_STB (High) 5 µs From ADC_START (High) 5 105 µs AT parasitic capacitance 500 pF Power supply rejection ratio DC (0–10 KHz) 1.2 0.7 °C/V Input referred temperature sensitivity error Variation due to device temperature (–40°C to +100°C). External temperature sensor held constant. 0.005 0.008 °C/°C Temperature monitor (TM) operational power supply current requirements (per temperature monitor instance, not including ADC or VAREFx) VCC33A 200 µA VCC33AP 150 µA VCC15A 50 µA Note: All results are based on averaging over 64 samples. |
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