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FG256 数据表(PDF) 90 Page - Microsemi Corporation

部件名 FG256
功能描述  SmartFusion Customizable System-on-Chip (cSoC)
PDF  197 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

FG256 数据表(HTML) 90 Page - Microsemi Corporation

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SmartFusion DC and Switching Characteristics
2- 78
R e v i sio n 1 2
Temperature Monitor
Unless otherwise noted, temperature monitor performance is specified with a 2N3904 diode-connected
bipolar transistor from National Semiconductor or Infineon Technologies, nominal power supply voltages,
with the output measured using the internal voltage reference with the internal ADC in 12-bit mode and
62.5 Ksps. After digital compensation. Unless otherwise noted, the specifications pertain to conditions
where the SmartFusion cSoC and the sensing diode are at the same temperature.
Table 2-94 • Temperature Monitor Performance Specifications
Specification
Test Conditions
Min.
Typical
Max.
Units
Input diode temperature range
–55
150
°C
233.2
378.15
K
Temperature sensitivity
2.5
mV/K
Intercept
Extrapolated to 0K
0
V
Input referred temperature offset
error
At 25°C (298.15K)
±1
1.5
°C
Gain error
Slope of BFSL vs. 2.5 mV/K
±1
2.5
% nom.
Overall accuracy
Peak error from ideal transfer function
±2
±3
°C
Input referred noise
At 25°C (298.15K) – no output averaging
4
°C rms
Output current
Idle mode
100
µA
Final measurement phases
10
µA
Analog settling time
Measured to 0.1% of final value, (with
ADC load)
From TM_STB (High)
5
µs
From ADC_START (High)
5
105
µs
AT parasitic capacitance
500
pF
Power supply rejection ratio
DC (0–10 KHz)
1.2
0.7
°C/V
Input referred temperature
sensitivity error
Variation due to device temperature
(–40°C to +100°C). External temperature
sensor held constant.
0.005
0.008
°C/°C
Temperature monitor (TM)
operational power supply current
requirements (per temperature
monitor instance, not including ADC
or VAREFx)
VCC33A
200
µA
VCC33AP
150
µA
VCC15A
50
µA
Note:
All results are based on averaging over 64 samples.



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