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FG256 数据表(PDF) 13 Page - Microsemi Corporation |
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FG256 数据表(HTML) 13 Page - Microsemi Corporation |
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13 / 197 page ![]() SmartFusion Customizable System-on-Chip (cSoC) Re vi s i on 12 2 - 1 2 – SmartFusion DC and Switching Characteristics General Specifications Operating Conditions Stresses beyond the operating conditions listed in Table 2-1 may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any other conditions beyond those listed under the Recommended Operating Conditions specified in Table 2-3 on page 2-3 is not implied. Table 2-1 • Absolute Maximum Ratings Symbol Parameter Limits Units VCC DC core supply voltage –0.3 to 1.65 V VJTAG JTAG DC voltage –0.3 to 3.75 V VPP Programming voltage –0.3 to 3.75 V VCCPLLx Analog power supply (PLL) –0.3 to 1.65 V VCCFPGAIOBx DC FPGA I/O buffer supply voltage –0.3 to 3.75 V VCCMSSIOBx DC MSS I/O buffer supply voltage –0.3 to 3.75 V VI I/O input voltage –0.3 V to 3.6 V (when I/O hot insertion mode is enabled) –0.3 V to (VCCxxxxIOBx + 1 V) or 3.6 V, whichever voltage is lower (when I/O hot- insertion mode is disabled) V VCC33A Analog clean 3.3 V supply to the analog circuitry –0.3 to 3.75 V VCC33ADCx Analog 3.3 V supply to ADC –0.3 to 3.75 V VCC33AP Analog clean 3.3 V supply to the charge pump –0.3 to 3.75 V VCC33SDDx Analog 3.3 V supply to the sigma-delta DAC –0.3 to 3.75 V VAREFx Voltage reference for ADC 1.0 to 3.75 V VCCRCOSC Analog supply to the integrated RC oscillator –0.3 to 3.75 V VDDBAT External battery supply –0.3 to 3.75 V VCCMAINXTAL Analog supply to the main crystal oscillator –0.3 to 3.75 V VCCLPXTAL Analog supply to the low power 32 kHz crystal oscillator –0.3 to 3.75 V VCCENVM Embedded nonvolatile memory supply –0.3 to 1.65 V VCCESRAM Embedded SRAM supply –0.3 to 1.65 V VCC15A Analog 1.5 V supply to the analog circuitry –0.3 to 1.65 V VCC15ADCx Analog 1.5 V supply to the ADC –0.3 to 1.65 V TSTG1 Storage temperature –65 to +150 °C TJ1 Junction temperature 125 °C Notes: 1. For flash programming and retention maximum limits, refer to Table 2-4 on page 2-4. For recommended operating conditions, refer to Table 2-3 on page 2-3. 2. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may undershoot or overshoot according to the limits shown in Table 2-5 on page 2-4. |
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