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AT45DB321D 数据表(PDF) 29 Page - List of Unclassifed Manufacturers |
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AT45DB321D 数据表(HTML) 29 Page - List of Unclassifed Manufacturers |
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29 / 52 page ![]() 29 AT45DB321D [DATASHEET] 3597T–DFLASH–11/2013 16. Electrical Specifications Table 16-1. DC and AC Operating Range AT45DB321D (2.5V Version) AT45DB321D Table 16-2. DC Characteristics Notes: 1. ICC1 during a buffer read is 20mA, maximum, @ 20MHz. 2. All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5V tolerant. Temperature under bias. . . . . . . . . -55 C to +125C Storage temperature . . . . . . . . . . . -65 C to +150C All input voltages (except VCC but including NC pins) with respect to ground . . . . . . . . . . . -0.6V to +6.25V All output voltages with respect to ground . . . . . . . . -0.6V to VCC + 0.6V *Notice: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. The "Absolute Maximum Ratings" are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Voltage Extremes referenced in the "Absolute Maximum Ratings" are intended to accommodate short duration undershoot/overshoot conditions and does not imply or guarantee functional device operation at these levels for any extended period of time. Operating temperature (case) -40°C to 85°C -40 C to 85C VCC power supply 2.5V to 3.6V 2.7V to 3.6V Symbol Parameter Condition Min Typ Max Unit IDP Deep power-down current CS, RESET, WP = VIH, all inputs at CMOS levels 15 25 μA ISB Standby current CS, RESET, WP = VIH, all inputs at CMOS levels 25 50 μA ICC1(1) Active current, read operation f = 20MHz; IOUT = 0mA; VCC = 3.6V 7 10 mA f = 33MHz; IOUT = 0mA; VCC = 3.6V 8 12 mA f = 50MHz; IOUT = 0mA; VCC = 3.6V 10 14 mA f = 66MHz; IOUT = 0mA; VCC = 3.6V 11 15 mA ICC2 Active current, program/erase operation VCC = 3.6V 12 17 mA ILI Input load current VIN = CMOS levels 1 μA ILO Output leakage current VI/O = CMOS levels 1 μA VIL Input low voltage VCC × 0.3 V VIH Input high voltage VCC × 0.7 V VOL Output low voltage IOL = 1.6mA; VCC = 2.7V 0.4 V VOH Output high voltage IOH = -100μA VCC - 0.2V V |
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