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AT45DB321D 数据表(PDF) 29 Page - List of Unclassifed Manufacturers

部件名 AT45DB321D
功能描述  32Mb, 2.5V or 2.7V DataFlash
PDF  52 Pages
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制造商  ETC2 [List of Unclassifed Manufacturers]
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标志 ETC2 - List of Unclassifed Manufacturers

AT45DB321D 数据表(HTML) 29 Page - List of Unclassifed Manufacturers

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AT45DB321D [DATASHEET]
3597T–DFLASH–11/2013
16.
Electrical Specifications
Table 16-1. DC and AC Operating Range
AT45DB321D (2.5V Version)
AT45DB321D
Table 16-2. DC Characteristics
Notes: 1.
ICC1 during a buffer read is 20mA, maximum, @ 20MHz.
2.
All inputs (SI, SCK, CS#, WP#, and RESET#) are guaranteed by design to be 5V tolerant.
Temperature under bias. . . . . . . . . -55
C to +125C
Storage temperature . . . . . . . . . . . -65
C to +150C
All input voltages (except VCC but including NC pins)
with respect to ground . . . . . . . . . . . -0.6V to +6.25V
All output voltages
with respect to ground . . . . . . . . -0.6V to VCC + 0.6V
*Notice:
Stresses beyond those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. The
"Absolute Maximum Ratings" are stress ratings only, and
functional operation of the device at these or any other
conditions beyond those indicated in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Voltage Extremes referenced in the "Absolute
Maximum Ratings" are intended to accommodate short
duration undershoot/overshoot conditions and does not imply
or guarantee functional device operation at these levels for any
extended period of time.
Operating temperature (case)
-40°C to 85°C
-40
C to 85C
VCC power supply
2.5V to 3.6V
2.7V to 3.6V
Symbol
Parameter
Condition
Min
Typ
Max
Unit
IDP
Deep power-down current
CS, RESET, WP = VIH,
all inputs at CMOS levels
15
25
μA
ISB
Standby current
CS, RESET, WP = VIH,
all inputs at CMOS levels
25
50
μA
ICC1(1)
Active current, read operation
f = 20MHz; IOUT = 0mA;
VCC = 3.6V
7
10
mA
f = 33MHz; IOUT = 0mA;
VCC = 3.6V
8
12
mA
f = 50MHz; IOUT = 0mA;
VCC = 3.6V
10
14
mA
f = 66MHz; IOUT = 0mA;
VCC = 3.6V
11
15
mA
ICC2
Active current, program/erase
operation
VCC = 3.6V
12
17
mA
ILI
Input load current
VIN = CMOS levels
1
μA
ILO
Output leakage current
VI/O = CMOS levels
1
μA
VIL
Input low voltage
VCC × 0.3
V
VIH
Input high voltage
VCC × 0.7
V
VOL
Output low voltage
IOL = 1.6mA; VCC = 2.7V
0.4
V
VOH
Output high voltage
IOH = -100μA
VCC - 0.2V
V



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