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AT45DB321D 数据表(PDF) 9 Page - List of Unclassifed Manufacturers |
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AT45DB321D 数据表(HTML) 9 Page - List of Unclassifed Manufacturers |
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9 / 52 page ![]() 9 AT45DB321D [DATASHEET] 3597T–DFLASH–11/2013 Table 5-2. Sector Erase Addressing 5.7 Chip Erase(1) The entire main memory can be erased at one time by using the chip erase command. To execute the chip erase command, a four-byte command sequence, C7H, 94H, 80H, and 9AH, must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deasserted to start the erase process. The erase operation is internally self-timed, and should take place in a time of tCE. During this time, the status register will indicate that the device is busy. The chip erase command will not affect sectors that are protected or locked down; the contents of those sectors will remain unchanged. Only those sectors that are not protected or locked down will be erased. Note: 1. Refer to the errata regarding chip erase on page 50. The WP pin can be asserted while the device is erasing, but protection will not be activated until the internal erase cycle completes. Table 5-3. Chip Erase Command Command Byte 1 Byte 2 Byte 3 Byte 4 Figure 5-1. Chip Erase Note: 1. Refer to the errata regarding chip erase on page 50. PA12/ A21 PA11/ A20 PA10/ A19 PA9/ A18 PA8/ A17 PA7/ A16 PA6/ A15 PA5/ A14 PA4/ A13 PA3/ A12 PA2/ A11 PA1/ A10 PA0/ A9 Sector 0 0 0 0 0 0 0 0 0 0 X X X 0a 0 0 0 0 0 0 0 0 0 1 X X X 0b 0 0 0 0 0 1 X X X X X X X 1 0 0 0 0 1 0 X X X X X X X 2 ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● 1 1 1 1 0 0 X X X X X X X 60 1 1 1 1 0 1 X X X X X X X 61 1 1 1 1 1 0 X X X X X X X 62 1 1 1 1 1 1 X X X X X X X 63 Chip erase C7H 94H 80H 9AH Opcode Byte 1 Opcode Byte 2 Opcode Byte 3 Opcode Byte 4 CS Each transition represents 8 bits SI |
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