STGW50H60DF datasheet(2/12 Pages) STMICROELECTRONICS

部件名	STGW50H60DF

功能描述	50 A, 600 V field stop trench gate IGBT with Ultrafast diode

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

STGW50H60DF

2/12

Doc ID 018673 Rev 5

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

100

Continuous collector current at TC = 100 °C

ICP

(1)

Pulse width limited by maximum junction temperature and turn-off within RBSOA

Pulsed collector current

200

VGE

Gate-emitter voltage

±20

Diode RMS forward current at TC = 25 °C

IFSM

Surge not repetitive forward current tp = 10 ms

sinusoidal

120

PTOT

Total dissipation at TC = 25 °C

360

tSC

Short-circuit withstand time at VCC = 400 V,

VGE = 15 V

6µs

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.35

°C/W

RthJC

Thermal resistance junction-case diode

1.5

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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