STGW50H60DF datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STGW50H60DF

4/12

Doc ID 018673 Rev 5

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon (1)

Eoff

(2)

Ets

Eon is the turn-on losses when a typical diode is used in the test circuit in

Figure 20. If the IGBT is offered

in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the

same temperature (25 °C and 125 °C).

Turn-off losses include also the tail of the collector current.

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 50 A,

RG = 10 Ω, VGE = 15 V

0.89

0.86

1.75

Eon (1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCE = 400 V, IC = 50 A,

RG = 10 Ω, VGE = 15 V

TJ = 125 °C

1.24

1.15

2.39

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward on-voltage

IF = 30 A

IF = 30 A, TJ = 125 °C

1.65

2.5

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 30 A,VR = 50 V,

di/dt = 100 A/µs

110

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 30 A,VR = 50 V,

di/dt = 100 A/µs

, TJ =125 °C

140

400

5.5

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