STGW50H60DF datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STGW50H60DF

功能描述	50 A, 600 V field stop trench gate IGBT with Ultrafast diode

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 12 page

This is information on a product in full production.

July 2012

Doc ID 018673 Rev 5

1/12

12

STGW50H60DF

50 A, 600 V field stop trench gate IGBT with Ultrafast diode

Datasheet

− production data

Features

■ High speed switching

■ Tight parameters distribution

■ Safe paralleling

■ Low thermal resistance

■ 6 µs short-circuit withstand time

■ Ultrafast soft recovery antiparallel diode

■ Lead free package

Applications

■ Photovoltaic inverters

■ Uninterruptible power supply

■ Welding

■ Power factor correction

■ High switching frequency converters

Description

Using advanced proprietary trench gate and field

stop structure, this IGBT leads to an optimized

compromise between conduction and switching

losses maximizing the efficiency for high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and a very tight parameter distribution result in an

easier paralleling operation.

Figure 1.

Internal schematic diagram

TO-247

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STGW50H60DF

GW50H60DF

TO-247

Tube

www.st.com

类似零件编号 - STGW50H60DF

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW50H65DFB2-4	317Kb / 15P	Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 package 03-Aug-2020

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类似说明 - STGW50H60DF

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