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STP45N10F7 数据表(PDF) 7 Page - STMicroelectronics

部件名 STP45N10F7
功能描述  N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP45N10F7 数据表(HTML) 7 Page - STMicroelectronics

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DocID024455 Rev 1
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STD45N10F7, STI45N10F7, STP45N10F7
Electrical characteristics
19
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
1000
100
0
0
20
VDS(V)
(pF)
Ciss
Coss
Crss
40
60
80
AM16114v1
VGS(th)
0.8
0.6
0.4
0.2
-75
0
TJ(°C)
(norm)
-50
1
75
25 50
100
ID=250µA
-50
125150
1.2
AM16115v1
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
RDS(on)
2
1
0
-75
0
TJ(°C)
(norm)
-50
75
25 50
100
0.5
1.5
-25
125
ID=22.5A
VGS=10 V
AM16116v1
VSD
5
15
ISD(A)
(V)
10
30
20 25
0.4
0.5
0.6
0.7
TJ=-55°C
TJ=175°C
TJ=25°C
0.8
0.9
35
40
1
AM16117v1
Figure 12. Normalized V(BR)DS vs temperature
V
-75
0
TJ(°C)
(norm)
-50
75
25 50
100
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
ID=1mA
1.04
-25
125
(BR)DS
AM16119v1



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