STP45N10F7 datasheet(4/19 Pages) STMICROELECTRONICS

部件名	STP45N10F7

功能描述	N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 19 page

Electrical characteristics

STD45N10F7, STI45N10F7, STP45N10F7

4/19

DocID024455 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

100

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 100 V

µA

VDS = 100 V; TC =125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 22.5 A

0.0145

0.018

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f =1 MHz,

VGS = 0

1640

Coss

Output capacitance

360

Crss

Reverse transfer

capacitance

-25

Total gate charge

VDD = 50 V, ID = 45 A

VGS = 10 V

Figure 14

-25

Qgs

Gate-source charge

5.1

Qgd

Gate-drain charge

12.2

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 22.5 A,

RG = 4.7 Ω, VGS = 10 V

Figure 13

-15

Rise time

td(off)

Turn-off delay time

Fall time

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