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STP45N10F7 数据表(PDF) 3 Page - STMicroelectronics |
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STP45N10F7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() DocID024455 Rev 1 3/19 STD45N10F7, STI45N10F7, STP45N10F7 Electrical ratings 19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage 20 V ID Drain current (continuous) at TC = 25 °C 45 A ID Drain current (continuous) at TC = 100 °C 32 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 180 A PTOT Total dissipation at Tc = 25 °C 60 W TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit DPAK TO-220 I2PAK Rthj-case Thermal resistance junction-case 2.5 2.5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Thermal resistance junction-pcb 31.2 °C/W |
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