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M24C32-R 数据表(PDF) 24 Page - STMicroelectronics |
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M24C32-R 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 42 page ![]() DC and AC parameters M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 24/42 DocID4578 Rev 24 Figure 11. AC measurement I/O waveform Table 10. Input parameters Symbol Parameter(1) 1. Characterized only, not tested in production. Test condition Min. Max. Unit CIN Input capacitance (SDA) - - 8 pF CIN Input capacitance (other pins) - - 6 pF ZL Input impedance (E2, E1, E0, WC)(2) 2. E2, E1, E0 input impedance when the memory is selected (after a Start condition). VIN < 0.3 VCC 30 - k Ω ZH VIN > 0.7 VCC 500 - k Ω Table 11. AC measurement conditions Symbol Parameter Min. Max. Unit Cbus Load capacitance 100 pF SCL input rise/fall time, SDA input fall time - 50 ns Input levels 0.2 VCC to 0.8 VCC V Input and output timing reference levels 0.3 VCC to 0.7 VCC V Table 12. Cycling performance Symbol Parameter Test condition Max. Unit Ncycle Write cycle endurance(1) 1. The Write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality (see Chapter 5.1.5), the write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer. TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000(2) 2. Cycling performance for products identified by process letter K or T (previous products were specified with 1 million cycles at 25 °C). Write cycle(3) 3. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 |
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