数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

FSGS230R 数据表(PDF) 2 Page - Intersil Corporation

部件名 FSGS230R
功能描述  Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INTERSIL [Intersil Corporation]
网页  http://www.intersil.com/cda/home
标志 INTERSIL - Intersil Corporation

FSGS230R 数据表(HTML) 2 Page - Intersil Corporation

  FSGS230R Datasheet HTML 1Page - Intersil Corporation FSGS230R Datasheet HTML 2Page - Intersil Corporation FSGS230R Datasheet HTML 3Page - Intersil Corporation FSGS230R Datasheet HTML 4Page - Intersil Corporation FSGS230R Datasheet HTML 5Page - Intersil Corporation FSGS230R Datasheet HTML 6Page - Intersil Corporation FSGS230R Datasheet HTML 7Page - Intersil Corporation FSGS230R Datasheet HTML 8Page - Intersil Corporation  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSGS230R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
14
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
9A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
40
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±30
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
56
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
22
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.45
W/oC
Single Pulsed Avalanche Current, L = 100
µH (See Test Figure) . . . . . . . . . . . . . . . . . . . . .IAS
36
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
14
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
40
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
300
oC
Weight (Typical)
4.4 (Typical)
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
200
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.5
V
TC = 25
oC
2.0
-
4.5
V
TC = 125
oC
1.0
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 160V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±30V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 14A
-
-
2.31
V
Drain to Source On Resistance
rDS(ON)12
ID = 9A,
VGS = 12V
TC = 25
oC
-
0.125
0.155
Ω
TC = 125
oC
-
-
0.310
Ω
Turn-On Delay Time
td(ON)
VDD = 100V, ID = 14A,
RL = 7.1Ω, VGS = 12V,
RGS = 7.5Ω
-
-
20
ns
Rise Time
tr
-
-
40
ns
Turn-Off Delay Time
td(OFF)
-
-
35
ns
Fall Time
tf
-
-
15
ns
Total Gate Charge
Qg(12)
VGS = 0V to 12V
VDD = 100V,
ID = 14A
-26
28
nC
Gate Charge Source
Qgs
-10
12
nC
Gate Charge Drain
Qgd
-
8
10
nC
Gate Charge at 20V
Qg(20)
VGS = 0V to 20V
-
40
-
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
3
-
nC
Plateau Voltage
V(PLATEAU) ID = 14A, VDS = 15V
-
7
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
1300
-
pF
Output Capacitance
COSS
-
230
-
pF
Reverse Transfer Capacitance
CRSS
-8-
pF
Thermal Resistance Junction to Case
R
θJC
-
-
2.2
oC/W
FSGS230R



Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com