4-3

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

-

-

1.2

V

Reverse Recovery Time

-

-

220

ns

Reverse Recovery Charge

-

1.5

-

µC

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

200

-

V

Gate to Source Threshold Volts

(Note 3)

2.0

4.5

V

Gate to Body Leakage

(Notes 2, 3)

-

100

nA

Zero Gate Leakage

(Note 3)

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

-

2.31

V

Drain to Source On Resistance

(Notes 1, 3)

-

0.155

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

(V)

(NOTE 6)

MAXIMUM

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating Area

SEESOA

Br

37

36

-20

200

I

60

32

-10

200

Au

82

28

-5

160

Au

82

28

-10

120

NOTES:

4. Testing conducted at Brookhaven National Labs.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. TYPICAL SEE SIGNATURE CURVE

120

80

40

0

0

-10

-15

-20

-25

-5

160

200

µ

µ

µ

240

200

160

120

80

40

0

-30

0

-5

-10

-15

-20

-25

LET = 82 GOLD

LET = 60 IODINE

LET = 37 BROMINE

-35

-40

FSGS230R