HUF76013P3 datasheet(1/11 Pages) INTERSIL

部件名	HUF76013P3

功能描述	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs

PDF	11 Pages

Scroll/Zoom	100%

制造商	INTERSIL [Intersil Corporation]

网页	http://www.intersil.com/cda/home

标志

1 / 11 page

1

TM

File Number

4849

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

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UltraFET® is a registered trademark of Intersil Corporation.

HUF76013P3, HUF76013D3S

20A, 20V, 0.022 Ohm, N-Channel, Logic

Level Power MOSFETs

The HUF76013 is an application-speciﬁc MOSFET

optimized for switching when used as the upper switch in

synchronous buck applications. The low gate charge and low

input capacitance results in lower driver and lower switching

losses thereby increasing the overall system efﬁciency.

Symbol

Packaging

Features

• 20A, 20V

-rDS(ON) = 0.022Ω, VGS = 10V

-rDS(ON) = 0.030Ω, VGS = 5V

• PWM Optimized for Synchronous Buck Applications

• Fast Switching

• Low Gate Charge

-Qg Total 14nC (Typ)

• Low Capacitance

-CISS 624pF (Typ)

-CRSS 71pF (Typ)

HUF76013D3S

JEDEC TO-252AA

HUF76013P3

JEDEC TO-220AB

D

G

S

GATE

SOURCE

DRAIN (FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF76013P3

TO-220AB

76013P

HUF76013D3S

TO-252AA

76013D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

SYMBOL

PARAMETER

HUF76013P3,

HUF76013D3S

UNITS

VDSS

Drain to Source Voltage (Note 1)

20

V

VDGR

Drain to Gate Voltage (RGS = 20kΩ) (Note 1)

20

V

VGS

Gate to Source Voltage

±16

V

ID

IDM

Drain Current

Continuous (TC = 25

oC, V

GS = 10V) (Figure 2)

Continuous (TC = 100

oC, V

GS = 5V)

Pulsed Drain Current

20

Figure 4

A

PD

Power Dissipation

Derate Above 25oC

50

0.4

W

W/oC

TJ, TSTG

Operating and Storage Temperature

-55 to 150

oC

TL

Tpkg

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

oC

THERMAL SPECIFICATIONS

RθJC

Thermal Resistance Junction to Case, TO-220, TO-252

2.5

oC/W

RθJA

Thermal Resistance Junction to Ambient TO-220

62

oC/W

Thermal Resistance Junction to Ambient TO-252

100

oC/W

NOTE:

1. TJ = 25

oC to 125oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Data Sheet

April 2000

类似零件编号 - HUF76013P3

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	HUF76013P3	195Kb / 10P	20A, 20V, 0.022 Ohm, N-Channel, Logic Level Power MOSFETs

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类似说明 - HUF76013P3

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